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  1. Y.-W. Hsiao, J.-Y. Song, H.-T. Wu, K.-T. Hong, C.-C. Leu, and C.-F. Shih, "Effects of cesium content on the triple-cation lead halide perovskite photodetectors with enhanced detectivity and response time," Journal of Alloys and Compounds, vol. 889, 2022.

  2. Y. W. Hsiao, S. Y. Wang, C. L. Huang, C. C. Leu, and C. F. Shih, "Resistive Switching Property of Organic-Inorganic Tri-Cation Lead Iodide Perovskite Memory Device," Nanomaterials, Article vol. 10, no. 6, p. 13, Jun 2020, Art. no. 1155.

  3. H. T. Wu, Y. T. Cheng, C. C. Leu, S. H. Wu, and C. F. Shih, "Improving Two-Step Prepared CH3NH3PbI3 Perovskite Solar Cells by Co-Doping Potassium Halide and Water in PbI2 Layer," Nanomaterials, Article vol. 9, no. 5, p. 11, May 2019, Art. no. 666.

  4. H.-T. Wu, Y.-C. Su, C.-W. Pao, and C.-F. Shih, "ZnO/Silicon-Rich Oxide Superlattices with High Thermoelectric Figure of Merit: A Comprehensive Study by Experiment and Molecular Dynamic Simulation," ACS applied materials & interfaces, vol. 11, no. 14, pp. 13507-13513, 2019.

  5. C.-F. Shih, H.-T. Wu, W.-L. Tsai, and C.-C. Leu, "Improvement of resistive memory properties of poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate)/CH3NH3PbI3 based device by potassium iodide additives," Journal of Alloys and Compounds, vol. 783, pp. 478-485, 2019.

  6. H.-T. Wu, C.-W. Pao, Y.-C. Su, and C.-F. Shih, "Al-doped ZnO/Silicon-rich oxide superlattices with high room-temperature thermoelectric figure of merit," Materials Letters, vol. 245, pp. 33-36, 2019.

  7. H.-T. Wu, Y.-F. Chen, C.-F. Shih, C.-C. Leu, and S.-H. Wu, "Memory properties of (110) preferring oriented CH3NH3PbI3 perovskite film prepared using PbS-buffered three-step growth method," Thin Solid Films, vol. 660, pp. 320-327, 2018.

  8. S.-H. Wu, K.-T. Huang, H.-J. Chen, and C.-F. Shih, "Cu2ZnSn (SxSe1− x) 4 thin film solar cell with high sulfur content (x approximately 0.4) and low Voc deficit prepared using a postsulfurization process," Solar Energy Materials and Solar Cells, vol. 175, pp. 89-95, 2018.

  9. S. Wu, Q. Guan, K. Huang, C.-F. Shih, and Y. Wang, "Effect of SnS buffer layer on solution process prepared Cu2ZnSnS4 solar cells," Chalcogenide Letters, vol. 14, no. 4, pp. 147-151, 2017.

  10. Shih-Hsiung Wu, Yu-Yun Wang, Kuan-Ta Huang, Chuan-Feng Shih, Chia-Wen Chang, Chou-Cheng Li, Sheng-Wen Chan. "Sulfur-rich sulfurization and solution stability of Cu2ZnSnS4 solar cells fabricated by 2-Methoxyethanol-based process". Journal of Alloys and Compounds 703 (2017) 309-314

  11. Shih-Hsiung Wu, Chia-Wen Chang, Hui-Ju Chen, Chuan-Feng Shih*, Yu-Yun Wang, Chou-Cheng Li, Sheng-Wen Chan. "High-efficiency Cu2ZnSn(S,Se)4 solar cells fabricated through a low-cost solution process and a two-step heat treatment". Prog. Photovolt: Res. Appl. 2017; 25:58–66

  12. Sheng-Wen Fu, Hui-Ju Chen, Hsuan-Ta Wu, Chuan-FengShih*. "Enhancing crystallization of silicon nanocrystal embedded in silicon-rich oxide by ion beam-assisted sputtering". Materials Science in Semiconductor Processing 56 (2016) 1–4

  13. Hui-Ju Chen, Sheng-Wen Fu, Shih-Hsiung Wu, Tsung-Chieh Tsai, Hsuan-Ta Wu, Chuan-Feng Shih*. "Impact of SnS Buffer Layer at Mo/Cu2ZnSnS4 Interface". J. Am. Ceram. Soc., 99 [5] 1808–1814 (2016)

  14. Hui-Ju Chen, Sheng-Wen Fu, Shih-Hsiung Wu, Hsuan-Ta Wu, Chuan-Feng Shih*. "Comparative study of self-constituent buffer layers (CuS, SnS, ZnS) for synthesis Cu2ZnSnS4 thin films." Materials Letters 169 (2016) 126–130

  15. Chen HJ, Fu SW, Wu SH, Tsai TC, Wu HT, Shih CF*. "Structural and photoelectron spectroscopic studies of band alignment at Cu2ZnSnS4/CdS heterojunction with slight Ni doping in Cu2ZnSnS4," J Phys D Appl Phys (Accepted: 11 April 2016). (2.721)

  16. Fu SW, Chen HJ, Wu SH, Wu HT, Shih CF*. "Impact of pre-alloying of sputtered Cu/Sn/Zn precursors for Cu2ZnSnS4 thin films." Mater Lett 2016, 173: 1-4. (2.489)

  17. Fu SW, Chen HJ, Wu HT, Shih CF*. "Effect of SiO2 layers on electroluminescence from Si nanocrystal/SiO2 superlattices prepared using argon ion beam assisted sputtering." Vacuum 2016, 126: 59-62. (1.858)

  18. Fu SW, Chen HJ, Wu HT, Chuang BR, Shih CF*. "Effect of hydrogen ion beam treatment on Si nanocrystal/SiO2 superlattice-based memory devices." Appl Surf Sci 2016, 367 134-139. (2.711)

  19. Fu SW, Chen HJ, Wu HT, Hung KT, Shih CF*. "Electrical and optical properties of Al:ZnO films prepared by ion-beam assisted sputtering." Ceram Int 2016, 42(2): 2626-2633. (2.605)

  20. Fu SW, Chen HJ, Wu HT, Chen SP, Shih CF* Enhancing the electroluminescence efficiency of Si NC/SiO superlattice-based light-emitting diodes through hydrogen ion beam treatment. Nanoscale 2016, 8 7155-7162. (7.394)

  21. Chen H-J, Fu S-W, Wu S-H, Tsai T-C, Wu H-T, Shih CF* "Impact of SnS Buffer Layer at Mo/Cu2ZnSnS4Interface." J Am Ceram Soc 2016, 99: 1808-1814. (2.610)

  22. Chen HJ, Fu SW, Tsai TC, Shih CF*. "Quaternary Cu2NiSnS4 thin films as a solar material prepared through electrodeposition." Mater Lett 2016, 166: 215-218. (2.489)

  23. H. J. Chen, S. W. Fu, S. H. Wu, H. T. Wu, C. F. Shih*, "Impact of pre-alloying before sulfurization of electroplated Cu/Sn bilayers", Journal of Alloys and Compounds, 651, 91-96, (2015).

  24. C. L. Huang*, Y. H. Chien , C. F. Shih, H. Y. Chang, "Crystal structure and dielectric properties of xCa(Mg1/3Nb2/3)O3-(1-x)(Ca0.61Nd0.26)TiO3 at the microwave frequency", Materials Research Bulletin, 63, 1-5 (2015).

  25. C. F. Shih, C. Y. Hsiao, Y. C. Hsiao, B. C. Chen, C. C. Leu*, "Evidence of change in crystallization behavior of thin HfO2 on Si: Effects of self-formed SiO2 capping layer", Thin solid films, 556, 291-293 (2014).

  26. Chuan-Feng Shih*, Chu-Yun Hsiao, and Kuan-Wei Su, "Enhanced white photoluminescence in silicon-rich oxide/SiO2 superlattices by low-energy ion-beam treatment", Optics Express, 21[13] 15888-15895 (2013) (IF=3.546, 5/80)

  27. Hui-Ju Chen, Hsuan-Ta Wu, Kuang-Teng Hung, Sheng-Wen Fu, Chuan-Feng Shih*, “Sodium Doping in Copper-Phthalocyanine /C60 Heterojunction for Organic Photovoltaic Applications”, Accepted, Thin solid films (2013) (IF=1.935, 3/18)

  28. Chuan-Feng Shih, Chu-Yun Hsiao, Bo-Cun Chen, Yu-Chih Hsiao, and Ching-Chich Leu*, “Constraint annealing of HfO2 films on silicon substrate: Suppression of Si outward emission” J. Am. Ceram. Soc., 96 [2] 376–378 (2013) (IF=2.169,2/25

  29. Shih-Hsiung Wu, Chuan Feng Shih*, Hung Chun Pan, Yu Yun Wang, Chung Shin Wu “Investigation of vulcanization of non-crystalline Cu2ZnSnS4 nano-particles”, Accepted. Thin solid films (2013). (IF=1.935, 3/18)

  30. Kuang-Teng Hung, Hsuan-Ta Wu, Sheng-Wen Fu, Hui-Ju Chen, Chu-Yun Hsiao, and Chuan-Feng Shih* “Improving Efficiency of Organic Solar Cells by Preparing Aluminum-Doped Zinc Oxide Films by Ion Beam-Assisted Sputtering”, OrganicElectronics, 14, 182-6 (2013). (IF=4.029, 14/118)

  31. Chu-Yun Hsiao, Jhih-Cheng Wu, and Chuan-Feng Shih*, “Epitaxy of Zn2TiO4 (111) thin films on GaN (001)”, Materials Research Bulletin, Accepted (2013). (IF=2.105, 55/232)

  32. Chu-Yun Hsiao, Wei-Min Li, Kuo-Shin Tung, Chuan-Feng Shih*, Wen-Dung Hsu, “Synthesis and application of magnesium oxide nanospheres with high surface area”, Materials Research Bulletin, 47, 3912-5 (2012). (IF=2.105, 55/232)

  33. C.W. Cheng, C. F. Shih, R. K. Behera, W. D. Hsu*, “Investigation of initial stages of nano-ceramic particle sintering using atomistic simulations”, Surf. Coat. Technol. (2012) (IF=2.141, 2/18)

  34. C.F. Shih*, K.T. Hung, H.T. Wu, S.W. Fu, H.J. Chen , C.Y. Hsiao, “In situ monitoring of photovoltaic properties in organic solar cells during thermal annealing”, Organic Electronics, [13] 373-6 (2012). (IF=4.029, 14/118)

  35. “Electrochemical performances of diamond-like carbon coatings on carbon steel, stainless steel, and brass”, Accepted. Thin Solid Films. (2012) (IF=1.935, 3/18)

  36. C.Y. Hsiao, J.C. Wu, H.T. Wu, and C.F. Shih*, “Composite Mg2TiO4(111)/MgO (111) gate oxide on GaN (001)”, J. Am. Ceram. Soc. 95 [1] 45-8 (2012). (IF=2.169, 2/25)

  37. C. Y. Hsiao, C. F. Shih,* K. W. Su, H. J. Chen, and S. W. Fu, “Self-assembled Si/SiO2 superlattice in Si-rich oxide films”, Appl. Phys. Lett. 99, 053115 (2011). (IF=3.863, 15/118)

  38. C. F. Shih*, K. T. Hung, C. Y. Hsiao, K. T. Huang, S. H. Chen, “Incorporation of potassium at CuPc/C60 interface for solar cell application”, Appl. Phys. Lett. 98, 113307 (2011). (IF=3.863)

  39. C. Y. Hsiao, C. F. Shih*, C. H. Chien, C. L. Huang, “Textured magnesium titanate as gate Oxide for GaN-based MOS capacitor”, J. Am. Ceram. Soc. 94 [4], 1005-1007 (2011). (IF=2.169, 2/25)

  40. K. T. Hung, K. T. Huang, C. Y. Hsiao, and C. F. Shih*, “Improving efficiency ofpentacene/C60 based solar cells with mixed Interlayers”, Thin Solid Film. 519, [15], 5270-3 (2011). (IF=1.935, 3/18)

  41. C. Y. Hsiao, C. F. Shih*, S. H. Chen, W. T. Jiang, “Comparison of silicon nanocrystals embedded slicon oxide films by sputtering and PECVD”, Thin Solid Film. 519, [15], 5086-9 (2011). (IF=1.935, 3/18)

  42. C. Y. Hsiao, C. F. Shih*, C. H. Chien, C. L. Huang, “MgTiO3 (003) thin film deposited on sapphire (0001) by sputtering”, J. Am. Ceram. Soc. 94 [2], 363-3 (2011). (IF=2.169, 2/25)

  43. C. F. Shih*, W. M. Li, W. D. Hsu and K. S. Tung “Low-loss magnesium titanate at microwave frequencies”, J. Am. Ceram. Soc. 93 [9] 2448–51 (2010). (IF=2.169, 2/25)

  44. C. F. Shih*, K. T. Hung, J. W. Wu, K. T. Huang, and S. H. Wu, “Improving efficiency of poly(3-hexylthiophene):1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61-based organic solar cells by heat-treatment under hydrostatic pressure”, Jpn. J. Appl. Phys.49, 04204(2010). (1.058)

  45. T. W. Wang, N. C. Chen*, W. C. Lien, M. C. Wu, C. F. Shih, “Violet light-emitting diodes grown on crack-free AlGaN templates”, J. Vac. Sci. Technol. B 27, 1881 (2009). (IF=1.341, 96/245)

  46. C. F. Shih*, W. M. Li, M. M. Lin, C. Y. Hsiao, K. T. Hung, “Low-temperature sintered Zn2TiO4:TiO2 with near-zero temperature coefficient of resonant frequency at microwave frequency”, J. Alloy. Compd., 485, 408 (2009). (IF=2.289, 4/75)

  47. C. F. Shih*, K. T. Hung, J. W. Wu, C. Y. Hsiao, and W. M. Li, “Efficiency improvement of blended poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 solar cells by nanoimprinting”, Appl. Phys. Lett. 94, 143505 (2009). (IF=3.863, 15/118)

  48. C. F. Shih*, K. T. Hung, S. C. Shu, W. M. Li, “Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics”, J. Alloy. Compd. 480, 541 (2009). (IF=2.289, 4/75)

  49. C. F. Shih*, W. M. Li, S. C. Shu, C. Y. Hsiao, and K. T. Hung, “Electrical properties of Al/HfO2/n-GaN prepared by reactive sputtering”, Jpn. J. Appl. Phys. 48, 020224, (2009).

  50. C. H. Shen, C. L. Huang*, C. F. Shih, C. M. Huang, “The effect of Ca0.61Nd0.26TiO3 addition on the microwave dielectric properties of (Mg0.95Ni0.05)TiO3 ceramics”, J. Alloy. Compd. 475, 391 (2009). (IF=2.289, 4/75)

  51. C. H. Shen, C. L. Huang*, C. F. Shih, C. M. Huang, “A novel temperature-compensated microwave dielectric (1-x)(Mg0.95Ni0.05)TiO3-xCa0.6La0.8/3TiO3 ceramics system”, Int. J. Appl. Ceram. Technol. (2009). Accepted.

  52. C. H. Shen, C. L. Huang, C. F. Shih, C. M. Huang*, “Dielectric properties of Mg0.95Ni0.05TiO3” ceramic modified by Nd0.5Na0.5TiO3 at microwave frequencies”, Curr. Appl. Phys. 9, 1042-1045 (2009).

  53. C. F. Shih*, W. M. Li, M. M. Lin, and K. T. Hung, “Zinc Titanates Sintered from ZnO and TiO2 Nanowires Prepared by Hydrothermal Process”, J. Electrochem. Soc. 156, E03 (2009). [NSC 96-2221-E-006-288-MY2] This paper was also selected for by Journal of Nanoscale Science & Technology, vol. 18, iss. 20.(IF=2.793,1/18)tualVirpublication

  54. T. W. Wang, N.C. Chen*, W. C. Lien, M. C. Wu, C. F. Shih, “Effects of the GaN and AIN nucleation layers on the crack-free AlGaN templates” J. Appl. Phys. 104 , 063104 (2008). (IF=2.168, 37/125)

  55. C. F. Shih*, W. M. Li, M. M. Lin, K. T. Hong, C. Y. Hsiao, and C. L. Lee, “Sintering of ZnO and TiO2 nanostructures”, Electrochem. Solid State Lett. 11, K105 (2008). (IF=1.995, 62/232)

  56. C. F Shih*, N. C. Chen and C. Y. Tseng, “Photoelectron Spectroscopic Investigation of InN and InN/GaN Heterostructures”, Thin Solid Films, 516, 5016 (2008). (IF=1.935, 3/18)

  57. C. H. Hsu*, C. F. Shih, C. C. Yu, H. H. Tung, and M. H. Chung, “Low temperature sintering and microwave dielectric properties of 0.6Ba(Co1/3Nb2/3)O3–0.4Ba(Ni1/3Nb2/3)O3 ceramics using copper additions”, J. Alloy. Compd. 461, 355 , 4/75)(2008).(IF=2.289

  58. C. L. Huang*, J. J. Wang, B. J. Li, and C. F. Shih, “Dielectric properties of (1-x)(Mg0.95Zn0.05)TiO3-x(Na0.5Nd0.5)TiO3 ceramic system at microwave frequencies”, Mater. Lett. 62, 2516 (2008).(IF=2.307, 47/232)

  59. G.. M. Wu*, C. W. Tsai, C. F. Shih, N. C. Chen and W. H. Feng “GaN/Si(111) epilayer based on low temperature AlN and AlGaN/GaN supperlattice for light emitting diodes”, Nanoscience and Technology, Pts 1 and 2, 587 (2007).

  60. G. W. Shu, P. F. Wu, M. H. Lo, and J. L. Shen, T. Y. Lin, H. J. Chang and Y. F. Chen*, C. F. Shih, C. A. Chang and N. C. Chen, “Concentration dependence of carrier localization in InN epilayers”, Appl. Phys. Lett. 89, 131913 (2006).

  61. A. P. Chiu, N. C. Chen*, P. H. Chang, and C. F. Shih “Crack-free AlGaN/GaN Bragg mirrors grown on Si (111) substrates by metalorganic vapor phase epitaxy”, Phys. Stat. Sol. (c), 3, 2014 (2006).

  62. K. T. Wu, P. H. Chang, S. T. Lien, N. C. Chen, C. A. Chang, C. F. Shih, W. C. Lien, Y. H. Wu, S. C. Chen, Y. H. Chang, and C. T. Liang “Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates”, Phys. E 32,566(2006).

  63. N. C. Chen*, W. C. Lien, C. F. Shih, P. H. Chang, T. W. Wang, and M. C. Wu, “Nitride light-emitting diodes grown on Si (111) using a TiN template”, Appl. Phys. Lett. 88, 191110 (2006).

  64. C. A. Chang*, S. T. Lien, C. H. Liu, C. F. Shih, N. C. Chen, P. H. Chang, H. C. Peng, T. Y. Tang, W. C. Lien, Y. H. Wu, K. T. Wu, J. W. Chen, C. T. Liang, Y. F. Chen, T. U. Lu, and T. Y. LIN, “Effect of Buffer Layers on Electrical, Opticaland Structural Properties of AlGaN/GaN Heterostructures Grown on Si”, Jpn. J. Appl. Phys. 45, 2516 (2006).

  65. C. H. Hou, C. C. Chen, B. J. Pong, M. H. Li, G. C. Chi, N. C. Chen, C. F. Shih, and P. H. Chang “GaN-based stacked micro-optics system”, Appl. Optics 45, 2396 (2006).

  66. W. S. Su, C. W. Lu, Y. F. Chen, T. Y. Lin, E. H. Lin, C. A. Chang, N. C. Chen, P. H. Chang, C. F. Shih and K. S. Liu, “Light induced electrostatic force spectroscopy: Application to local electronic transitions in InN epifilms”, J. Appl.Phys. 99,53518(2006).

  67. H. Y. Lin, Y. F. Chen, T.Y. Lin, C. F. Shih, K.S. Liu, and N.C. Chen, “Direct evidence of compositional pulling effect in AlxGa1-xN epilayers”, J. Cryst. Growth, 290, 225-228 (2006).

  68. P. H. Chang, N. C. Chen, Y. N. Wang, C. F. Shih, M. H. Wu, T. H. Yang, Y. H. Tzou, and S. J. Yang, “Light-emitting diodes with nickel substrates fabricated by electroplating”, J. Vac. Sci. Technol. B 23, L22 (2005).

  69. N.C. Chen*, P.H. Chang, Y. N. Wang, H.C. Peng, W.C. Lien, C. F. Shih, Chin-An Chang, G.M. Wu, “Schottky behavior at InN-GaN interface”, Appl. Phys. Lett. 87, 2121111 (2005).

  70. C. F. Shih, N. C. Chen*, P. H. Chang, and K. S. Liu, “Band offsets of the InN/GaN interface” Jpn. J. Appl. Phys. 44 7892 (2005).

  71. C. F. Shih, N. C. Chen*, P. H. Chang, and K. S. Liu, “Effect of surface electronic states of p-type GaN on the blue light-emitting diodes”, J. Electrochem. Soc.152, G816 (2005).

  72. C. F. Shih, N. C. Chen*, P. H. Chang, and K. S. Liu, “Field emission properties of self-assembled InN nano-structures: Effect of Ga incorporation”, J. Cryst. Growth 281, 328 (2005).

  73. S.C. Chen, S.K. Lin, K.T. Wu, C.P. Huang, P.H. Chang, N.C. Chen, C.A. Chang, H.C. Peng, C. F. Shih, K.S. Liu, H.S. Wang, P.T. Yang, C. T. Liang, Y. H. Chang, and Y.F. Chen, “Transport measurements on MOVPE-grown InN films”, Microelectronics Journal 36, 428 (2005).

  74. C. F. Shih, N. C. Chen*, P. H. Chang, K. S. Liu “AlGaN films grown on (0001) sapphire by a two-step method”, Appl. Phys. Lett. 86, 2111031, (2005).

  75. C. F. Shih, N. C. Chen*, C. A. Chang, and K. S. Liu, “Blue, Green, and White InGaN Light-Emitting Diodes Grown on Si” Jpn. J. of Appl. Phys. part 2, Vol. 44, No. 4A, pp L140-L143 (2005).

  76. C. F. Shih, M. Y. Keh, Y. N. Wang, N. C. Chen, Chin-An Chang, P. H. Chang, and K. S. Liu, “High quality and crack-free AlxGa1-xN (x~0.2) grown on sapphire by a two-step growth method” J. Cryst. Growth 277, 44 (2005).

  77. S. K. Lin, K. T. Wu, C. P. Huang, C. T. Liang, Y. H. Chang, Y. F. Chen, P. H. Chang, N. C. Chen, C. A. Chang, H. C. Peng, C. F. Shih, K. S. Liu, and T. Y. Lin, “Electron transport in In-rich InxGa1-xN films” J. Appl. Phys. 97, 046101 (2005).

  78. C. A. Chang*, C. F. Shih, N. C. Chen, T. Y. Lin, and K. S. Liu “In-rich In1-xGaxN films by metalorganic vapor phase epitaxy” Appl. Phys. Lett. 85, 6131 (2004).

  79. N. C. Chen, C. Y. Tseng, A. P. Chiu, C. F. Shih, and P. H. Chang, “Application of modified transmission line model to measure p-type GaN contact” Appl. Phys. Lett. 85, 6086 (2004).

  80. N. C. Chen, P. H. Chang, A. P. Chiu, M. C. Wang, W. S. Feng, G. M. Wu, C. F. Shih, and K. S. Liu, “Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN” Appl. Phys. Lett. 84, 2584 (2004).

  81. N. C. Chen, C. F. Shih, C. A. Chang, A. P. Chiu, S. D. Teng, and K. S. Liu, “High-quality GaN films grown on Si(111) by a reversed Stranski-Krastanov growth mode” Phys. Status Solidi B-Basic Res. 241, 2698 (2004).

  82. C. A. Chang, C. F. Shih, N. C. Chen, P. H. Chang, and K. S. Liu, “High mobility InN films grown by metal-organic vapor phase epitaxy” Phys. Status Solidi C, 1, 2559 (2004).

  83. I-Nan Lin, K. Perng, L. H Lee, C. F. Shih, K. S. Liu, G. A. Evans and J. W. Steeds, “Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-depositeddiamond films”Appl. Phys. Lett. 77, 1277 (2000).

  84. C. F. Shih, K. S. Liu, I-Nan Lin, “Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films” Diam. Rel. Mater. 9, 1591 (2000).

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